2SA1962, FJA4213 دیتاشیت

2SA1962, FJA4213

مشخصات دیتاشیت

نام دیتاشیت 2SA1962, FJA4213
حجم فایل 573.539 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت 2SA1962, FJA4213

دانلود دیتاشیت

سایر مستندات

2SA1962OTU 8 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJA4213RTU
  • Transistor Type: PNP
  • Operating Temperature: -50°C~+150°C@(Tj)
  • Collector Current (Ic): 17A
  • Power Dissipation (Pd): 130W
  • Transition Frequency (fT): 30MHz
  • DC Current Gain (hFE@Ic,Vce): 55@1A,5V
  • Collector Cut-Off Current (Icbo): 5uA
  • Collector-Emitter Breakdown Voltage (Vceo): 250V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@8A,800mA
  • Package: TO-3P-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 17A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
  • Base Part Number: FJA4213
  • detail: Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P

محصولات مشابه