FCP125N60E دیتاشیت

FCP125N60E

مشخصات دیتاشیت

نام دیتاشیت FCP125N60E
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCP125N60E

دانلود دیتاشیت

سایر مستندات

FCP125N60E 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCP125N60E
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 278W
  • Total Gate Charge (Qg@Vgs): 75nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 2.25nF@380V
  • Continuous Drain Current (Id): 29A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 17pF@380V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 102mΩ@10V,14.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FCP125
  • detail: N-Channel 600V 29A (Tc) 278W (Tc) Through Hole TO-220-3

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