FDP8D5N10C, FDPF8D5N10C دیتاشیت

FDP8D5N10C, FDPF8D5N10C

مشخصات دیتاشیت

نام دیتاشیت FDP8D5N10C, FDPF8D5N10C
حجم فایل 992.537 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FDP8D5N10C, FDPF8D5N10C

دانلود دیتاشیت

سایر مستندات

FDP8D5N10C 7 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDPF8D5N10C
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 2.4W;35W
  • Total Gate Charge (Qg@Vgs): 34nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2475pF@50V
  • Continuous Drain Current (Id): 76A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@130uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@76A,10V
  • Package: TO-220F
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 76A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2475pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FDPF8
  • detail: N-Channel 100V 76A (Tc) 2.4W (Ta), 35W (Tc) Through Hole TO-220F

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