FJAF4210OTU دیتاشیت

FJAF4210OTU

مشخصات دیتاشیت

نام دیتاشیت FJAF4210OTU
حجم فایل 77.052 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت FJAF4210OTU

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJAF4210OTU
  • Transistor Type: PNP
  • Collector Current (Ic): 10A
  • Power Dissipation (Pd): 80W
  • Transition Frequency (fT): 30MHz
  • DC Current Gain (hFE@Ic,Vce): 70@3A,4V
  • Collector Cut-Off Current (Icbo): 10uA
  • Collector-Emitter Breakdown Voltage (Vceo): 140V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,5A
  • Package: TO-3PF
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
  • Power - Max: 80W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
  • Base Part Number: FJAF4210
  • detail: Bipolar (BJT) Transistor PNP 140V 10A 30MHz 80W Through Hole TO-3PF

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