AFGB30T65SQDN دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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AFGB30T65SQDN
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حجم فایل
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88.316
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi AFGB30T65SQDN
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
60A
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Power Dissipation (Pd):
220W
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Turn?on Delay Time (Td(on)):
14.5ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Total Gate Charge (Qg@Ic,Vge):
56nC
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Turn?off Delay Time (Td(off)):
63.2ns
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Pulsed Collector Current (Icm):
120A
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Diode Reverse Recovery Time (Trr):
245ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.1V@15V,30A
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Package:
TO-263-3
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101, EcoSPARK®
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
60A
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Current - Collector Pulsed (Icm):
120A
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Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 30A
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Power - Max:
220W
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Switching Energy:
-
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Input Type:
-
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Gate Charge:
56nC
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Td (on/off) @ 25°C:
14.5ns/63.2ns
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Test Condition:
400V, 30A, 6Ohm, 15V
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Reverse Recovery Time (trr):
245ns
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Mounting Type:
Surface Mount
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Supplier Device Package:
D²PAK-3 (TO-263-3)
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Base Part Number:
AFGB30
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detail:
IGBT 650V 60A 220W Surface Mount D²PAK-3 (TO-263-3)
