دیتاشیت FCH190N65F-F155
مشخصات دیتاشیت
نام دیتاشیت | FCH190N65F_F155 |
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حجم فایل | 493.965 کیلوبایت |
نوع فایل | |
تعداد صفحات | 10 |
دانلود دیتاشیت FCH190N65F_F155 |
FCH190N65F_F155 Datasheet |
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مشخصات
- Manufacturer: ON Semiconductor
- Series: FRFET®, SuperFET® II
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3225pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 Long Leads
- Package / Case: TO-247-3
- Base Part Number: FCH19
- detail: N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-247 Long Leads