NVMTS0D7N06CTXG دیتاشیت

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مشاهده دیتاشیت NVMTS0D7N06CTXG	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMTS0D7N06CTXG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 5W;294.6W
Total Gate Charge (Qg@Vgs): 152nC@10V
Input Capacitance (Ciss@Vds): 11535pF@30V
Continuous Drain Current (Id): 60.5A;464A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 0.72mΩ@50A,10V
Package: DFNW-8
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 30V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFNW (8.3x8.4)
Package / Case: 8-PowerTDFN
Base Part Number: NVMTS0
detail: N-Channel 60V 60.5A (Ta), 464A (Tc) 5W (Ta), 294.6W (Tc) Surface Mount 8-DFNW (8.3x8.4)