FDI038AN06A0 دیتاشیت

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دانلود دیتاشیت FDI038AN06A0	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDI038AN06A0
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 310W
Total Gate Charge (Qg@Vgs): 124nC@10V
Input Capacitance (Ciss@Vds): 6400pF@25V
Continuous Drain Current (Id): 17A;80A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@80A,10V
Package: TO-262
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Mounting Type: Through Hole
Supplier Device Package: I2PAK (TO-262)
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Base Part Number: FDI038
detail: N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)