FGA50S110P دیتاشیت

FGA50S110P

مشخصات دیتاشیت

نام دیتاشیت FGA50S110P
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت FGA50S110P

دانلود دیتاشیت

سایر مستندات

FGA50S110P 9 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGA50S110P
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 50A
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Ic,Vge): 195nC
  • Pulsed Collector Current (Icm): 120A
  • Collector-Emitter Breakdown Voltage (Vces): 1100V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.6V@15V,50A
  • Package: TO-3P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1100V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 195nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
  • Base Part Number: FGA50
  • detail: IGBT Trench Field Stop 1100V 50A 300W Through Hole TO-3PN

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