NTMFS4H02NFT1G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NTMFS4H02NFT1G
|
|
حجم فایل
|
84.952
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NTMFS4H02NFT1G
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
SO-8FL
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
25V
-
Current - Continuous Drain (Id) @ 25°C:
37A (Ta), 193A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id:
2.1V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
40.9nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
2652pF @ 12V
-
FET Feature:
-
-
Power Dissipation (Max):
3.13W (Ta), 83W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
-
Package / Case:
8-PowerTDFN
-
Base Part Number:
NTMFS4
-
detail:
N-Channel 25V 37A (Ta), 193A (Tc) 3.13W (Ta), 83W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
