NGTB45N60SWG دیتاشیت

NGTB45N60SWG

مشخصات دیتاشیت

نام دیتاشیت NGTB45N60SWG
حجم فایل 79.704 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت NGTB45N60SWG

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سایر مستندات

NGTB45N60SWG 10 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTB45N60SWG
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 90A
  • Power Dissipation (Pd): 250W
  • Input Capacitance (Cies@Vce): -
  • Pulsed Collector Current (Icm): 180A
  • Turn?off Switching Loss (Eoff): 0.55mJ
  • Diode Reverse Recovery Time (Trr): 376ns
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Not For New Designs
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
  • Power - Max: 250W
  • Switching Energy: 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 134nC
  • Td (on/off) @ 25°C: 70ns/144ns
  • Test Condition: 400V, 45A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 376ns
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Base Part Number: NGTB45
  • detail: IGBT Trench Field Stop 600V 90A 250W Through Hole TO-247-3

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