NTMTS0D7N06CTXG دیتاشیت

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مشاهده دیتاشیت NTMTS0D7N06CTXG	دانلود دیتاشیت

RoHS: true
Type: -
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTMTS0D7N06CTXG
Power Dissipation (Pd): -
Total Gate Charge (Qg@Vgs): -
Drain Source Voltage (Vdss): -
Input Capacitance (Ciss@Vds): -
Continuous Drain Current (Id): -
Gate Threshold Voltage (Vgs(th)@Id): -
Reverse Transfer Capacitance (Crss@Vds): -
Drain Source On Resistance (RDS(on)@Vgs,Id): -
Package: DFNW-8(8.4x8.3)
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60.5A (Ta), 464A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 720µOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 30V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 294.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFNW (8.3x8.4)
Package / Case: 8-PowerTDFN
Base Part Number: NTMTS0D
detail: N-Channel 60V 60.5A (Ta), 464A (Tc) 5W (Ta), 294.6W (Tc) Surface Mount 8-DFNW (8.3x8.4)