دیتاشیت FGH40T100SMD-F155
مشخصات دیتاشیت
| نام دیتاشیت | FGH40T100SMD |
|---|---|
| حجم فایل | 2024.291 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت FGH40T100SMD |
FGH40T100SMD Datasheet |
|---|
مشخصات
- RoHS: true
- Type: Trench Field Stop
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: onsemi FGH40T100SMD-F155
- Operating Temperature: -55°C~+175°C@(Tj)
- Collector Current (Ic): 80A
- Power Dissipation (Pd): 333W
- Turn?on Delay Time (Td(on)): 29ns
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 2.35mJ
- Total Gate Charge (Qg@Ic,Vge): 398nC
- Turn?off Delay Time (Td(off)): 285ns
- Pulsed Collector Current (Icm): 120A
- Turn?off Switching Loss (Eoff): 1.15mJ
- Diode Reverse Recovery Time (Trr): 78ns
- Collector-Emitter Breakdown Voltage (Vces): 1000V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.3V@15V,40A
- Package: TO-247
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 333W
- Switching Energy: 2.35mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 398nC
- Td (on/off) @ 25°C: 29ns/285ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 78ns
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Base Part Number: FGH40
- detail: IGBT Trench Field Stop 1000V 80A 333W Through Hole TO-247-3