FDP4D5N10C, FDPF4D5N10C دیتاشیت

FDP4D5N10C, FDPF4D5N10C

مشخصات دیتاشیت

نام دیتاشیت FDP4D5N10C, FDPF4D5N10C
حجم فایل 994.008 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت FDP4D5N10C, FDPF4D5N10C

دانلود دیتاشیت

سایر مستندات

FDPF4D5N10C 7 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDP4D5N10C
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 2.4W;150W
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 5065pF@50V
  • Continuous Drain Current (Id): 128A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@310uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@100A,10V
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 310µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5065pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 150W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP4
  • detail: N-Channel 100V 128A (Tc) 2.4W (Ta), 150W (Tc) Through Hole TO-220-3

محصولات مشابه