دیتاشیت FGA6560WDF
مشخصات دیتاشیت
| نام دیتاشیت |
FGA6560WDF
|
| حجم فایل |
2603.13
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Package:
TO-3P
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
120A
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Current - Collector Pulsed (Icm):
180A
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Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 60A
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Power - Max:
306W
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Switching Energy:
2.46mJ (on), 520µJ (off)
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Input Type:
Standard
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Gate Charge:
84nC
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Td (on/off) @ 25°C:
25.6ns/71ns
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Test Condition:
400V, 60A, 6Ohm, 15V
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Reverse Recovery Time (trr):
110ns
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Package / Case:
TO-3P-3, SC-65-3
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Supplier Device Package:
TO-3PN
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Base Part Number:
FGA65
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detail:
IGBT Trench Field Stop 650V 120A 306W Through Hole TO-3PN
