FCH085N80-F155 دیتاشیت

FCH085N80-F155

مشخصات دیتاشیت

نام دیتاشیت FCH085N80-F155
حجم فایل 64.642 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCH085N80-F155

دانلود دیتاشیت

سایر مستندات

FCH085N80 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCH085N80-F155
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 446W
  • Total Gate Charge (Qg@Vgs): 255nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 10825pF@100V
  • Continuous Drain Current (Id): 46A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@4.6mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 85mΩ@23A,10V
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10825pF @ 100V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 446W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
  • Base Part Number: FCH08
  • detail: N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-247

محصولات مشابه