FGH50N3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FGH50N3
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حجم فایل
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49.284
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
PT
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGH50N3
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Operating Temperature:
55°C~+150°C@(Tj)
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Collector Current (Ic):
75A
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Power Dissipation (Pd):
463W
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Turn?on Delay Time (Td(on)):
20ns
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.13mJ
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Total Gate Charge (Qg@Ic,Vge):
180nC
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Turn?off Delay Time (Td(off)):
135ns
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Pulsed Collector Current (Icm):
240A
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Turn?off Switching Loss (Eoff):
0.092mJ
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Collector-Emitter Breakdown Voltage (Vces):
300V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.4V@15V,30A
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
PT
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Voltage - Collector Emitter Breakdown (Max):
300V
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Current - Collector (Ic) (Max):
75A
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Current - Collector Pulsed (Icm):
240A
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Vce(on) (Max) @ Vge, Ic:
1.4V @ 15V, 30A
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Power - Max:
463W
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Switching Energy:
130µJ (on), 92µJ (off)
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Input Type:
Standard
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Gate Charge:
180nC
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Td (on/off) @ 25°C:
20ns/135ns
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Test Condition:
180V, 30A, 5Ohm, 15V
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247-3
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Base Part Number:
FGH50
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detail:
IGBT PT 300V 75A 463W Through Hole TO-247-3
