دیتاشیت FCH060N80-F155
مشخصات دیتاشیت
| نام دیتاشیت |
FCH060N80
|
| حجم فایل |
499.437
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCH060N80-F155
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
500W
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Total Gate Charge (Qg@Vgs):
350nC@10V
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Drain Source Voltage (Vdss):
800V
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Input Capacitance (Ciss@Vds):
14685pF@100V
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Continuous Drain Current (Id):
56A
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@5.8mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
60mΩ@29A,10V
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
SuperFET® II
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
800V
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Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
60mOhm @ 29A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 5.8mA
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Gate Charge (Qg) (Max) @ Vgs:
350nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
14685pF @ 100V
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FET Feature:
Super Junction
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Power Dissipation (Max):
500W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-247 Long Leads
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Package / Case:
TO-247-3
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Base Part Number:
FCH06
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detail:
N-Channel 800V 56A (Tc) 500W (Tc) Through Hole TO-247 Long Leads
