NSBA124EDXV6T1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MUN5112DW1, NSBA124EDxx	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Base Part Number: NSBA12
detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563