دیتاشیت 2N5308
مشخصات دیتاشیت
| نام دیتاشیت |
2N5308
|
| حجم فایل |
27.412
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
2
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Obsolete
-
Transistor Type:
NPN - Darlington
-
Current - Collector (Ic) (Max):
1.2A
-
Voltage - Collector Emitter Breakdown (Max):
40V
-
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 200µA, 200mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
7000 @ 2mA, 5V
-
Power - Max:
625mW
-
Frequency - Transition:
-
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
-
Supplier Device Package:
TO-92-3
-
Base Part Number:
2N5308
-
detail:
Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3
