دیتاشیت BU406TU
مشخصات دیتاشیت
| نام دیتاشیت |
BU406
|
| حجم فایل |
59.676
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BU406TU
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
7A
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Power Dissipation (Pd):
60W
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Transition Frequency (fT):
10MHz
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Collector Cut-Off Current (Icbo):
-
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Collector-Emitter Breakdown Voltage (Vceo):
200V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
1V@5A,500mA
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
7A
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Voltage - Collector Emitter Breakdown (Max):
200V
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Vce Saturation (Max) @ Ib, Ic:
1V @ 500mA, 5A
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Current - Collector Cutoff (Max):
5mA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
-
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Power - Max:
60W
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Frequency - Transition:
10MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220AB
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Base Part Number:
BU406
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detail:
Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220AB
