MPSA12RLRA 数据手册
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技术规格
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Obsolete
- Transistor Type: NPN - Darlington
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 10µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: MPSA12
- detail: Bipolar (BJT) Transistor NPN - Darlington 20V 625mW Through Hole TO-92-3