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MPSA14G Datasheet
Datasheet specifications
| Datasheet's name | MPSA14, MMBTA14, PZTA14 |
|---|---|
| File size | 784.496 KB |
| File type | |
| Number of pages | 16 |
Download Datasheet MPSA14, MMBTA14, PZTA14 |
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Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Bulk
- Part Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Base Part Number: MPSA14
- detail: Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 625mW Through Hole TO-92-3