دیتاشیت NTD110N02R-001G

مشخصات دیتاشیت

دانلود دیتاشیت NTD110N02R, STD110N02R	NTD110N02R, STD110N02R Datasheet

Manufacturer: ON Semiconductor
Series: -
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Base Part Number: NTD110
detail: N-Channel 24V 12.5A (Ta), 110A (Tc) 1.5W (Ta), 110W (Tc) Through Hole I-PAK