دیتاشیت NTD12N10-1G

NTD12N10

مشخصات دیتاشیت

نام دیتاشیت NTD12N10
حجم فایل 162.519 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت NTD12N10

NTD12N10 Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: NTD12
  • detail: N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK