دیتاشیت NTD12N10-1G
مشخصات دیتاشیت
نام دیتاشیت |
NTD12N10
|
حجم فایل |
162.519
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
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Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
165mOhm @ 6A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1.28W (Ta), 56.6W (Tc)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
NTD12
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detail:
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK