دیتاشیت NTD12N10-1G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD12N10
|
| حجم فایل |
162.519
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
165mOhm @ 6A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
1.28W (Ta), 56.6W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
NTD12
-
detail:
N-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK
