دیتاشیت NTD3813N-1G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD3813N
|
| حجم فایل |
96.846
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
16V
-
Current - Continuous Drain (Id) @ 25°C:
9.6A (Ta), 51A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
8.75mOhm @ 15A, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
12.8nC @ 4.5V
-
Vgs (Max):
±16V
-
Input Capacitance (Ciss) (Max) @ Vds:
963pF @ 12V
-
FET Feature:
-
-
Power Dissipation (Max):
1.2W (Ta), 34.9W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
NTD38
-
detail:
N-Channel 16V 9.6A (Ta), 51A (Tc) 1.2W (Ta), 34.9W (Tc) Through Hole I-PAK
