دیتاشیت NTD4960N-35G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD4960N
|
| حجم فایل |
141.905
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
8.9A (Ta), 55A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 15V
-
FET Feature:
-
-
Power Dissipation (Max):
1.07W (Ta), 35.71W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
I-PAK
-
Package / Case:
TO-251-3 Stub Leads, IPak
-
Base Part Number:
NTD49
-
detail:
N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-PAK
