NDD04N50ZT4G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NDD04N50ZT4G
|
|
حجم فایل
|
72.224
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NDD04N50ZT4G
-
Power Dissipation (Pd):
61W
-
Drain Source Voltage (Vdss):
500V
-
Continuous Drain Current (Id):
3A
-
Gate Threshold Voltage (Vgs(th)@Id):
4.5V@50uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.7Ω@10V,1.5A
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
500V
-
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
2.7Ohm @ 1.5A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 50µA
-
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
308pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
61W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
DPAK
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
NDD04
-
detail:
N-Channel 500V 3A (Tc) 61W (Tc) Surface Mount DPAK
