دیتاشیت BS108ZL1G
مشخصات دیتاشیت
| نام دیتاشیت |
BS108
|
| حجم فایل |
93.52
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
250mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
2V, 2.8V
-
Rds On (Max) @ Id, Vgs:
8Ohm @ 100mA, 2.8V
-
Vgs(th) (Max) @ Id:
1.5V @ 1mA
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
350mW (Ta)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-92-3
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Base Part Number:
BS108
-
detail:
N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3
