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2SB1216T-TL-E Datasheet
Datasheet specifications
| Datasheet's name | 2SB1216/2SD1816 |
|---|---|
| File size | 514.172 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet 2SB1216/2SD1816 |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: 2-TP-FA
- Base Part Number: 2SB1216
- detail: Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Surface Mount 2-TP-FA