FJBE2150DTU دیتاشیت

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مشاهده دیتاشیت FJBE2150D	دانلود دیتاشیت

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Manufacturer: ON Semiconductor
Series: ESBC™
Packaging: Tube
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 330mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Power - Max: 110W
Frequency - Transition: 5MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Base Part Number: FJBE21
detail: Bipolar (BJT) Transistor NPN 800V 2A 5MHz 110W Surface Mount D²PAK (TO-263)