دیتاشیت FQB8N60CTM-WS

FQB8N60C, FQI8N60C

مشخصات دیتاشیت

نام دیتاشیت FQB8N60C, FQI8N60C
حجم فایل 772.378 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

دانلود دیتاشیت FQB8N60C, FQI8N60C

FQB8N60C, FQI8N60C Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263AB)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: FQB8
  • detail: N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB)