NTK3139PT1G دیتاشیت

NTK3139PT1G

مشخصات دیتاشیت

نام دیتاشیت NTK3139PT1G
حجم فایل 92.41 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت NTK3139PT1G

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سایر مستندات

NTK3139P 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTK3139PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 310mW
  • Total Gate Charge (Qg@Vgs): -
  • Input Capacitance (Ciss@Vds): 170pF@16V
  • Continuous Drain Current (Id): 660mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 480mΩ@780mA,4.5V
  • Package: SOT-723
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Vgs (Max): ±6V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-723
  • Package / Case: SOT-723
  • Base Part Number: NTK313
  • detail: P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723

محصولات مشابه