NSVB114YPDXV6T1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MUN5314DW1, NSBC114YPDxx
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حجم فایل
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139.137
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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Manufacturer:
ON Semiconductor
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Resistor - Base (R1):
10kOhms
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Resistor - Emitter Base (R2):
47kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
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Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
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Current - Collector Cutoff (Max):
500nA
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Frequency - Transition:
-
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Power - Max:
500mW
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Mounting Type:
Surface Mount
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Package / Case:
SOT-563, SOT-666
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Supplier Device Package:
SOT-563
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Base Part Number:
NSVB11
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detail:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
