NVMFS6B14NLT1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NVMFS6B14NL	دانلود دیتاشیت

مستندات دیگری یافت نشد!

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVMFS6B14NLT1G
Power Dissipation (Pd): 3.8W
Drain Source Voltage (Vdss): 100V
Continuous Drain Current (Id): 11A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@10V,20A
Package: DFN-5(5.9x4.9)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN
Base Part Number: NVMFS6
detail: N-Channel 100V 11A (Ta), 55A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)