NVD5863NLT4G دیتاشیت

NVD5863NL

مشخصات دیتاشیت

نام دیتاشیت NVD5863NL
حجم فایل 115.414 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NVD5863NL

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مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVD5863NLT4G
  • Power Dissipation (Pd): 3.1W
  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 14.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.1mΩ@10V,41A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: NVD586
  • detail: N-Channel 60V 14.9A (Ta), 82A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount DPAK

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