NGTD23T120F2WP دیتاشیت

NGTD23T120F2WP

مشخصات دیتاشیت

نام دیتاشیت NGTD23T120F2WP
حجم فایل 79.28 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

دانلود دیتاشیت NGTD23T120F2WP

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سایر مستندات

NGTD23T120F2 3 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTD23T120F2WP
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Turn?on Switching Loss (Eon): -
  • Pulsed Collector Current (Icm): 120A
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,25A
  • Package: SMD
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Switching Energy: -
  • Input Type: Standard
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Base Part Number: NGTD23
  • detail: IGBT Trench Field Stop 1200V Surface Mount Die

محصولات مشابه