IXFN360N15T2 دیتاشیت

IXFN360N15T2

مشخصات دیتاشیت

نام دیتاشیت IXFN360N15T2
حجم فایل 84.738 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت IXFN360N15T2

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سایر مستندات

IXFN360N15T2 7 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFN360N15T2
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 1.07kW
  • Total Gate Charge (Qg@Vgs): 715nC@10V
  • Drain Source Voltage (Vdss): 150V
  • Input Capacitance (Ciss@Vds): 47500pF@25V
  • Continuous Drain Current (Id): 310A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@8mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,60A
  • Package: SOT-227
  • Manufacturer: IXYS
  • Series: GigaMOS™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1070W (Tc)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
  • detail: N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B

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