IXTP80N10T دیتاشیت

IXTP80N10T

مشخصات دیتاشیت

نام دیتاشیت IXTP80N10T
حجم فایل 76.885 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت IXTP80N10T

دانلود دیتاشیت

سایر مستندات

IXT(A,P)80N10T 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTP80N10T
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 230W
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 3040pF@25V
  • Continuous Drain Current (Id): 80A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@100uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 14mΩ@10V,25A
  • Package: TO-220
  • Manufacturer: IXYS
  • Series: TrenchMV™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • detail: N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220AB

محصولات مشابه