دیتاشیت IXTP180N10T
مشخصات دیتاشیت
| نام دیتاشیت | IXT(A,P)180N10T |
|---|---|
| حجم فایل | 303.587 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت IXT(A,P)180N10T |
IXT(A,P)180N10T Datasheet |
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مشخصات
- Manufacturer: IXYS
- Series: TrenchMV™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- detail: N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-220AB
