دیتاشیت IXFN38N100P
مشخصات دیتاشیت
| نام دیتاشیت |
IXFN38N100P
|
| حجم فایل |
147.403
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Littelfuse/IXYS IXFN38N100P
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1kW
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Total Gate Charge (Qg@Vgs):
350nC@10V
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Drain Source Voltage (Vdss):
1kV
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Input Capacitance (Ciss@Vds):
24000pF@25V
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Continuous Drain Current (Id):
38A
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Gate Threshold Voltage (Vgs(th)@Id):
6.5V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
210mΩ@10V,19A
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Package:
SOT-227
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Manufacturer:
IXYS
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Series:
HiPerFET™, PolarP2™
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
1000V
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Current - Continuous Drain (Id) @ 25°C:
38A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
210mOhm @ 19A, 10V
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Vgs(th) (Max) @ Id:
6.5V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
350nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
24000pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1000W (Tc)
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Mounting Type:
Chassis Mount
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Supplier Device Package:
SOT-227B
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Package / Case:
SOT-227-4, miniBLOC
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detail:
N-Channel 1000V 38A (Tc) 1000W (Tc) Chassis Mount SOT-227B
