IXYH50N120C3D1 دیتاشیت

IXYH50N120C3D1

مشخصات دیتاشیت

نام دیتاشیت IXYH50N120C3D1
حجم فایل 72.54 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت IXYH50N120C3D1

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: Littelfuse/IXYS IXYH50N120C3D1
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 90A
  • Power Dissipation (Pd): 625W
  • Turn?on Delay Time (Td(on)): 28ns
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 3mJ
  • Total Gate Charge (Qg@Ic,Vge): 142nC
  • Turn?off Delay Time (Td(off)): 133ns
  • Pulsed Collector Current (Icm): 210A
  • Turn?off Switching Loss (Eoff): 1mJ
  • Diode Reverse Recovery Time (Trr): 195ns
  • Collector-Emitter Breakdown Voltage (Vces): 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@15V,50A
  • Package: TO-247AD
  • Manufacturer: IXYS
  • Series: GenX3™, XPT™
  • Packaging: Tube
  • Part Status: Active
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 240A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
  • Power - Max: 750W
  • Switching Energy: 3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 28ns/133ns
  • Test Condition: 600V, 50A, 5Ohm, 15V
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
  • detail: IGBT 1200V 100A 750W Through Hole TO-247 (IXYH)

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