IXTH10P50P دیتاشیت

IXTH10P50P

مشخصات دیتاشیت

نام دیتاشیت IXTH10P50P
حجم فایل 77.208 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت IXTH10P50P

دانلود دیتاشیت

سایر مستندات

IXT(H,T)10P50/11P50 2 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTH10P50P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Vgs): 50nC@10V
  • Drain Source Voltage (Vdss): 500V
  • Input Capacitance (Ciss@Vds): 2840pF@25V
  • Continuous Drain Current (Id): 10A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,5A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: -
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXTH)
  • Package / Case: TO-247-3
  • detail: P-Channel 500V 10A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

محصولات مشابه