IXTH2N300P3HV دیتاشیت

IXTH2N300P3HV

مشخصات دیتاشیت

نام دیتاشیت IXTH2N300P3HV
حجم فایل 69.078 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت IXTH2N300P3HV

دانلود دیتاشیت

سایر مستندات

IXT(T,H)2N300P3HV 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTH2N300P3HV
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 520W
  • Total Gate Charge (Qg@Vgs): 73nC@10V
  • Drain Source Voltage (Vdss): 3000V
  • Input Capacitance (Ciss@Vds): 1890pF@25V
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 21Ω@1A,10V
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 3000V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 21Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247HV
  • Package / Case: TO-247-3 Variant
  • detail: N-Channel 3000V 2A (Tc) 520W (Tc) Through Hole TO-247HV

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