IXT(A,H,P,Q)52P10P دیتاشیت

IXT(A,H,P,Q)52P10P

مشخصات دیتاشیت

نام دیتاشیت IXT(A,H,P,Q)52P10P
حجم فایل 186.398 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

دانلود دیتاشیت IXT(A,H,P,Q)52P10P

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سایر مستندات

IXTP52P10P 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXTQ52P10P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 300W
  • Total Gate Charge (Qg@Vgs): 60nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2845pF@25V
  • Continuous Drain Current (Id): 52A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 50mΩ@52A,10V
  • Package: TO-3P
  • Manufacturer: IXYS
  • Series: PolarP™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2845pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
  • detail: P-Channel 100V 52A (Tc) 300W (Tc) Through Hole TO-3P

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