دیتاشیت IXFN210N30X3
مشخصات دیتاشیت
| نام دیتاشیت |
IXFN210N30X3
|
| حجم فایل |
295.84
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
IXYS
-
Series:
HiPerFET™
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
300V
-
Current - Continuous Drain (Id) @ 25°C:
210A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
4.6mOhm @ 105A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 8mA
-
Gate Charge (Qg) (Max) @ Vgs:
375nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
24200pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
695W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Chassis Mount
-
Supplier Device Package:
SOT-227B
-
Package / Case:
SOT-227-4, miniBLOC
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detail:
N-Channel 300V 210A (Tc) 695W (Tc) Chassis Mount SOT-227B
