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VMO1200-01F Datasheet
Datasheet specifications
| Datasheet's name | VMO1200-01F |
|---|---|
| File size | 521.63 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet VMO1200-01F |
Download Datasheet |
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Other documentations
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Technical specifications
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tray
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.35mOhm @ 932A, 10V
- Vgs(th) (Max) @ Id: 4V @ 64mA
- Gate Charge (Qg) (Max) @ Vgs: 2520nC @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-Li
- Package / Case: Y3-Li
- Base Part Number: VMO
- detail: N-Channel 100V 1220A (Tc) Chassis Mount Y3-Li