IXFH24N80P دیتاشیت

IXFH24N80P

مشخصات دیتاشیت

نام دیتاشیت IXFH24N80P
حجم فایل 79.328 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت IXFH24N80P

دانلود دیتاشیت

سایر مستندات

IXF(H,K,T)24N80P 5 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFH24N80P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 650W
  • Total Gate Charge (Qg@Vgs): 105nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 7200pF@25V
  • Continuous Drain Current (Id): 24A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@4mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 400mΩ@10V,12A
  • Package: TO-247
  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 650W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
  • detail: N-Channel 800V 24A (Tc) 650W (Tc) Through Hole TO-247AD (IXFH)

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