IXFB30N120P دیتاشیت

IXFB30N120P

مشخصات دیتاشیت

نام دیتاشیت IXFB30N120P
حجم فایل 74.04 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت IXFB30N120P

دانلود دیتاشیت

سایر مستندات

IXFB30N120P 6 pages

IXFB30N120P 5 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Littelfuse/IXYS IXFB30N120P
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1250W
  • Total Gate Charge (Qg@Vgs): 310nC@10V
  • Drain Source Voltage (Vdss): 1200V
  • Input Capacitance (Ciss@Vds): 22500pF@25V
  • Continuous Drain Current (Id): 30A
  • Gate Threshold Voltage (Vgs(th)@Id): 6.5V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@500mA,10V
  • Package: TO-264-3
  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarP2™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 22500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264™
  • Package / Case: TO-264-3, TO-264AA
  • detail: N-Channel 1200V 30A (Tc) 1250W (Tc) Through Hole PLUS264™

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