دیتاشیت IXTA1R6N100D2
مشخصات دیتاشیت
| نام دیتاشیت | IXT(Y,A,P)1R6N100D2 |
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| حجم فایل | 284.888 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت IXT(Y,A,P)1R6N100D2 |
IXT(Y,A,P)1R6N100D2 Datasheet |
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مشخصات
- Manufacturer: IXYS
- Series: -
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 25V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- detail: N-Channel 1000V 1.6A (Tc) 100W (Tc) Surface Mount TO-263 (IXTA)
